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Infineon Technologies Electronic Components Datasheet

SKB02N60 Datasheet

Fast IGBT

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SKP02N60
SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP02N60
SKB02N60
VCE IC VCE(sat) Tj Package
600V 2A
2.2V
150°C TO-220AB
TO-263AB
Ordering Code
Q67040-S4214
Q67040-S4215
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Value
600
6.0
2.9
12
12
Unit
V
A
6.0
2.9
12
±20
10
30
-55...+150
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02


Infineon Technologies Electronic Components Datasheet

SKB02N60 Datasheet

Fast IGBT

No Preview Available !

SKP02N60
SKB02N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
www.DataSheetT4Uh.ecrommal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJCD
RthJA
RthJA
Conditions
TO-220AB
TO-263AB
Max. Value
4.2
7
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
VGE=0V, IF=2.9A
Tj=25°C
Tj=150°C
IC=150µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
1.9
2.2
1.4
1.25
4
-
-
-
1.6
142
18
10
14
7
20
Unit
max.
-V
2.4
2.7
1.8
1.65
5
µA
20
250
100 nA
-S
170 pF
22
12
18 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Jul-02


Part Number SKB02N60
Description Fast IGBT
Maker Infineon Technologies
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