SKB06N60 Datasheet | Infineon

.. SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - 75% lower Eoff pared to previous generation C bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for: - Motor controls G E - Inverter - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour P-TO-220-3-1 P-TO-263-3-2 (D²-PAK) - parallel switching capability (TO-220AB) (TO-263AB) - Very soft, fast recovery anti-parallel Em Con diode - Isolated TO-220, 2.5k V, 60s - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP06N60 SKB06N60 SKA06N60 Maximum Ratings Parameter Symbol Value SKP06N60 SKB06N60 SKA06N60 P-TO-220-3-31 (Full PAK) VCE 600V IC 6A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4230 Q67040-S4231 Q67040-S4340 5A TO-220-3-31 Unit Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Mounting Torque, M3 Screw 2)...