SKB02N60 Datasheet | Infineon

SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: ..- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Em Con diode P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP02N60 SKB02N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 2A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4214 Q67040-S4215 Symbol VCE IC Value 600 6.0 2.9 Unit V A ICpul s IF 12 12 6.0 2.9 IFpul s VGE t SC Ptot 12 ±20 10 30 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤...