900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

SPI80N06S-08 Datasheet

OptiMOS Power-Transistor

No Preview Available !

www.DataSheet4U.com
SIPMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
P-TO263-3-2
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
7.7 m
80 A
P-TO262-3-1
P-TO220-3-1
• Repetive Avalanche up to
Tjmax = 175 °C
• dv /dt rated
VDD=30 V, ID=80 A, VGS=10 V, RG=2.4
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code Marking
Q670T6C0=-S2651°8C5, V GS1=N10060V8
Q670T6C0=-S160108°7C, V 1GSN=016008V
Q67060-S6186 1N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current1)
I D T C=25 °C, V GS=10 V
80 A
T C=100 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 ,
V DD=25 V
Avalanche energy, periodic2)
E AR T j175 °C
Reverse diode dv /dt 2)
dv /dt
I D=80 A, V DS=40 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
80
320
700 mJ
30
6 kV/µs
±20
300
-55 ... +175
55/175/56
V
W
°C
2004-11-30


Infineon Technologies Electronic Components Datasheet

SPI80N06S-08 Datasheet

OptiMOS Power-Transistor

No Preview Available !

www.DataSheet4U.com
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- 0.38 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=240 µA
55
2.1
-
3.0
-V
4
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=25 V, V GS=0 V,
T j=150 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=80 A
-
-
-
10 100
10 100 nA
6.5 8 m
V GS=10 V, I D=80 A
SMD version
- 6.2 7.7
Transconductance2)
footnote on page 3
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
-
73
-S
Rev. 1.0
page 2
2004-11-30


Part Number SPI80N06S-08
Description OptiMOS Power-Transistor
Maker Infineon Technologies
PDF Download

SPI80N06S-08 Datasheet PDF





Similar Datasheet

1 SPI80N06S-08 OptiMOS Power-Transistor
Infineon Technologies
2 SPI80N06S-08 Power-Transistor
Infineon Technologies





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy