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Infineon Technologies Electronic Components Datasheet

SPI80N06S2-07 Datasheet

OptiMOS Power-Transistor

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SPI80N06S2-07 pdf
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OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Product Summary
VDS 55 V
RDS(on) 6.6 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2-07
SPB80N06S2-07
SPI80N06S2-07
Package
Ordering Code
P- TO220 -3-1 Q67060-S6024
P- TO263 -3-2 Q67060-S6026
P- TO262 -3-1 Q67060-S6037
Marking
2N0607
2N0607
2N0607
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
530
25
6
±20
250
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09


Infineon Technologies Electronic Components Datasheet

SPI80N06S2-07 Datasheet

OptiMOS Power-Transistor

No Preview Available !

SPI80N06S2-07 pdf
www.DataSheet4U.com
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 0.4 0.6 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=180µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=68A
V(BR)DSS 55
-
-V
VGS(th)
2.1
3
4
IDSS
IGSS
µA
- 0.01 1
- 1 100
- 1 100 nA
RDS(on) - 5.6 6.6 m
1Current limited by bondwire ; with an RthJC = 0.6K/W the chip is able to carry ID= 135A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09


Part Number SPI80N06S2-07
Description OptiMOS Power-Transistor
Maker Infineon Technologies
Total Page 8 Pages
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