900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

SPI80N08S2-07 Datasheet

OptiMOS Power-Transistor

No Preview Available !

www.DataSheet4U.com
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
Product Summary
VDS 75 V
RDS(on) max. SMD version 7.1 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N08S2-07
SPB80N08S2-07
SPI80N08S2-07
Package
Ordering Code
P- TO220 -3-1 Q67040-S4263
P- TO263 -3-2 Q67040-S4264
P- TO262 -3-1 Q67060-S6082
Marking
2N0807
2N0807
2N0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=60V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09


Infineon Technologies Electronic Components Datasheet

SPI80N08S2-07 Datasheet

OptiMOS Power-Transistor

No Preview Available !

www.DataSheet4U.com
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 0.3 0.5 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=250µA
Zero gate voltage drain current
VDS=75V, VGS=0V, Tj=25°C
VDS=75V, VGS=0V, Tj=125°C 2)
V(BR)DSS 75
-
-V
VGS(th) 2.1 3
4
IDSS
µA
- 0.01 1
- 1 100
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance 4)
VGS=10V, ID=66A
VGS=10, ID=66A, SMD version
IGSS
- 1 100 nA
RDS(on)
m
- 5.7 7.4
- 5.4 7.1
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 132A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-05-09


Part Number SPI80N08S2-07
Description OptiMOS Power-Transistor
Maker Infineon Technologies
PDF Download

SPI80N08S2-07 Datasheet PDF





Similar Datasheet

1 SPI80N08S2-07 OptiMOS Power-Transistor
Infineon Technologies
2 SPI80N08S2-07 Power-Transistor
Infineon Technologies
3 SPI80N08S2-07R OptiMOS Power-Transistor
Infineon Technologies





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy