Datasheet Summary
SPI80N08S2-07R OptiMOS® Power-Transistor
Feature
- N-Channel
Product Summary VDS R DS(on) ID 75 7.3 80
P- TO262 -3-1
V mΩ A
- Enhancement mode
- 175°C operating temperature
..
- Avalanche rated
- dv/dt rated
- Integrated gate resistance for easy parallel connection
Type SPI80N08S2-07R
Package P- TO262 -3-1
Ordering Code Q67060-S7417
Marking RN0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1)
TC=25°C
Symbol ID
Value 80 80
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 750 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80 A , V DD=25V,...