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Infineon Technologies Electronic Components Datasheet

SPI80N10L Datasheet

OptiMOS Power-Transistor

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Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
SIPMOSPower-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
Product Summary
VDS 100 V
RDS(on) 14 m
ID 80 A
P-TO263-3-2
P-TO220-3-1
Type
SPP80N10L
SPB80N10L
SPI80N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4173
Q67042-S4171
Q67042-S4172
Marking
80N10L
80N10L
80N10L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=80A, VDS=0V, di/dt=200A/µs
Gate source voltage
Power dissipation
TC=25°C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Page 1
Value
80
58
320
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2002-08-14


Infineon Technologies Electronic Components Datasheet

SPI80N10L Datasheet

OptiMOS Power-Transistor

No Preview Available !

www.DataSheet4U.com
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 0.6 K/W
- - 62.5
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-V
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=58A
Drain-source on-state resistance
VGS=10V, ID=58A
VGS(th) 1.2 1.6
2
IDSS
IGSS
µA
- 0.1 1
- - 100
- 10 100 nA
RDS(on) - 15 24 m
RDS(on) - 11 14
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-08-14


Part Number SPI80N10L
Description OptiMOS Power-Transistor
Maker Infineon Technologies
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SPI80N10L Datasheet PDF






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