900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

BFR106 Datasheet

Low Noise Silicon Bipolar RF Transistor

No Preview Available !

Low Noise Silicon Bipolar RF Transistor
High linearity low noise RF transistor
22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
For UHF / VHF applications
Driver for multistage amplifiers
For linear broadband and antenna amplifiers
Collector design supports 5 V supply voltage
Pb-free (RoHS compliant) package
Qualification report according to AEC-Q101 available
BFR106
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR106
Marking
Pin Configuration
R7s 1=B 2=E 3=C
Package
SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage,
TA = 25°C
TA = -55°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 76 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
16
15
20
20
3
210
21
700
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
105
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-21


Infineon Technologies Electronic Components Datasheet

BFR106 Datasheet

Low Noise Silicon Bipolar RF Transistor

No Preview Available !

BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15
-
-
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V, pulse measured
ICES
ICBO
IEBO
hFE
--1
- 0.001 0.03
- 1 30
- 1 30
70 100 140
Unit
V
µA
nA
-
2 2013-11-21


Part Number BFR106
Description Low Noise Silicon Bipolar RF Transistor
Maker Infineon Technologies AG
PDF Download

BFR106 Datasheet PDF






Similar Datasheet

1 BFR10 NPN Transistor
SGS-ATES
2 BFR106 NPN 5 GHz wideband transistor
NXP
3 BFR106 NPN Silicon RF Transistor
Siemens Semiconductor Group
4 BFR106 Low Noise Silicon Bipolar RF Transistor
Infineon Technologies AG
5 BFR106 NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy