Datasheet4U Logo Datasheet4U.com

BFR106 - NPN Transistor

General Description

NF = 2.5 dB TYP.

︱S21e︱2 = 10.5 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplif

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage 20 V 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 100 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 mA 0.