BFR106 Datasheet and Specifications PDF

The BFR106 is a NPN 5 GHz wideband transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Frequency5 GHz
Height1.1 mm
Length2.9 mm
Width1.3 mm
Max Operating Temp150 °C
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Part NumberBFR106 Datasheet
ManufacturerNXP Semiconductors
Overview NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PINNING PIN DESCRIPTION Code: R7p 1 base 2 emitter 3 collector l.   TYP.     80 5 11.5 350 MAX. 20 15 100 500     UNIT V V mA mW GHz dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC c.
Part NumberBFR106 Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrosta. . Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V µA 100 nA 100 µA 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter.
Part NumberBFR106 Datasheet
DescriptionLow Noise Silicon Bipolar RF Transistor
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • . ng point2) RthJS 105 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-11-21 BFR106 Electrical Characteristics at TA = 25 °C, unless otherwis.
Part NumberBFR106 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance a. TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 100 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 10 μA hFE DC Current Gain IC= 70mA ; VCE= 8V 40 22.

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