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Infineon Technologies Electronic Components Datasheet

BSS84P Datasheet

SIPMOS Small-Signal-Transistor

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SIPMOSSmall-Signal-Transistor
Feature
· P-Channel
· Enhancement mode
· Logic Level
· Avalanche rated
· dv/dt rated
BSS84P
Product Summary
VDS
RDS(on)
-60 V
8W
ID -0.17 A
PG-SOT-23
3
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
Type
BSS84P
BSS84P  
Package
Tape and Reel Marking
PG-SOT-23
H6327:3000pcs/r. YBs
PG-SOT-23         H6433:10000pcs/r. YBs
Gate
pin1
Maximum Ratings, at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
WID=-0.17 A , VDD=-25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
ESD Class
JESD22-A114-HBM
Value
-0.17
-0.14
-0.68
2.6
0.036
-6
±20
0.36
-55... +150
55/150/56
Class 0
2
1 VPS05161
Drain
pin 3
Source
pin 2
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.7
Page 1
2011-07-11


Infineon Technologies Electronic Components Datasheet

BSS84P Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
BSS84P
Symbol
Values
Unit
min. typ. max.
RthJS
- - 200 K/W
RthJA
- - 350
- - 300
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS -60
-
-V
VGS=0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID=-20µA
Zero gate voltage drain current
VDS=-60V, VGS=0, TA=25°C
VDS=-60V, VGS=0, TA=125°C
Gate-source leakage current
VGS=-20V, VDS=0
Drain-source on-state resistance
VGS(th)
-1 -1.5 -2
IDSS
IGSS
µA
- -0.1 -1
- -10 -100
- -10 -100 nA
RDS(on)
-
8 12 W
VGS=-4.5V, ID=-0.14A
Drain-source on-state resistance
VGS=-10V, ID=-0.17A
RDS(on) - 5.8 8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.7
Page 2
2011-07-11


Part Number BSS84P
Description SIPMOS Small-Signal-Transistor
Maker Infineon Technologies AG
Total Page 8 Pages
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