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IPD14N06S2-80 Datasheet Power-Transistor

Manufacturer: Infineon Technologies AG

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IPD14N06S2-80 power-transistor by Infineon Technologies AG - Datasheet Preview

Datasheet Details

Part number	IPD14N06S2-80
Manufacturer	Infineon Technologies AG
File Size	144.78 KB
Description	Power-Transistor
Datasheet	IPD14N06S2-80 Datasheet

Overview

IPD14N06S2-80 OptiMOS® Power-Transistor.

Key Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (lead free).
Ultra low Rds(on).
100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 80 17 V mΩ A PG-TO252-3-11 Type IPD14N06S2-80 Package PG-TO252-3-11 Marking 2N0680 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Co.

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