Datasheet4U Logo Datasheet4U.com

IPD13N03LA - OptiMOS 2 Power-Transistor

General Description

and charts started herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • Ideal for high-frequency dc/dc converters.
  • Qualified according to JEDEC for target.

📥 Download Datasheet

Datasheet Details

Part number IPD13N03LA
Manufacturer Infineon Technologies AG
File Size 348.77 KB
Description OptiMOS 2 Power-Transistor
Datasheet download datasheet IPD13N03LA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD135N03L Power-Transistor Infineon
IPD135N03L N-Channel MOSFET INCHANGE
IPD135N03LG Power-Transistor Infineon
IPD135N08N3 N-Channel MOSFET INCHANGE
IPD135N08N3 Power-Transistor Infineon

Other Datasheets by Infineon Technologies AG

Part Number Description
IPD12N03L OptiMOS Buck converter series
IPD14N03L OptiMOS Buck converter series
IPD14N06S2-80 Power-Transistor
IPD04N03L MOSFET
IPD05N03LA OptiMOS 2 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 13 30 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD13N03LA IPU13N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4159 Q67042-S4160 Marking 13N03LA 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltag