IPD14N06S2-80
IPD14N06S2-80 is Power-Transistor manufactured by Infineon.
OptiMOS® Power-Transistor
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 55 80 17 V mΩ A
PG-TO252-3-11
Type IPD14N06S2-80
Package PG-TO252-3-11
Marking 2N0680
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category;...