• Part: IPD14N06S2-80
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 144.78 KB
Download IPD14N06S2-80 Datasheet PDF
Infineon
IPD14N06S2-80
IPD14N06S2-80 is Power-Transistor manufactured by Infineon.
OptiMOS® Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 80 17 V mΩ A PG-TO252-3-11 Type IPD14N06S2-80 Package PG-TO252-3-11 Marking 2N0680 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category;...