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IPD14N06S2-80
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 55 80 17 V mΩ A
PG-TO252-3-11
Type IPD14N06S2-80
Package PG-TO252-3-11
Marking 2N0680
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=14A Value 17 12 68 43 ±20 47
IPD14N06S2-80 Datasheet
