PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Infineon Technologies AG

📥 Download Datasheet

PTF210901E Datasheet Preview — Preview of PTF210901E PDF

Datasheet Details

Part number	PTF210901E
Manufacturer	Infineon Technologies AG
File Size	266.35 KB
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
Datasheet	PTF210901E_InfineonTechnologiesAG.pdf

PTF210901E Product details

Description

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Carrier WCDMA Drive Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency

Features

Internal matching for wideband performance Typical two.
carrier 3GPP WCDMA performance - Average output power = 19 W at.
37 dBc - Efficiency = 25% Typical CW performance - Output power at P.
1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power.
-30 Efficiency (%), Gain (dB) IMD (dBc).

📁 PTF210901E Similar Datasheet

PTF - Metal Film Resistors (Vishay)
PTF08A-E - Relay (Omron)
PTF10007 - 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10015 - 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10019 - 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10021 - 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)

Other Datasheets by Infineon Technologies AG

PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210301 - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301A - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210451 - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451E - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

Published: Apr 16, 2005 |