logo

PTF210901E Datasheet, Infineon Technologies AG

PTF210901E Datasheet, Infineon Technologies AG

PTF210901E

datasheet Download (Size : 266.35KB)

PTF210901E Datasheet

PTF210901E mhz

ldmos rf power field effect transistor 90 w/ 2110-2170 mhz.

PTF210901E

datasheet Download (Size : 266.35KB)

PTF210901E Datasheet

PTF210901E Features and benefits

PTF210901E Features and benefits


*
* Internal matching for wideband performance Typical two
  –carrier 3GPP WCDMA performance - Average output power = 19 W at
  –37 dBc.

PTF210901E Application

PTF210901E Application

from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two
  –Ca.

PTF210901E Description

PTF210901E Description

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two
  –Carrier WCDMA Drive
  –Up VDD =.

Image gallery

PTF210901E Page 1 PTF210901E Page 2 PTF210901E Page 3

TAGS

PTF210901E
LDMOS
Power
Field
Effect
Transistor
2110-2170
MHz
Infineon Technologies AG

Manufacturer


Infineon (https://www.infineon.com/) Technologies AG

Related datasheet

PTF210901

PTF210301

PTF210301A

PTF210301E

PTF210451

PTF210451E

PTF211301

PTF211301A

PTF211802

PTF211802A

PTF211802E

PTF

PTF080101

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts