PTF210901E
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Two- Carrier WCDMA Drive- Up
VDD = 28 V, IDQ = 1050 m A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 d B, 3.84 MHz BW
-25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency
Features
- - Internal matching for wideband performance Typical two- carrier 3GPP WCDMA performance
- Average output power = 19 W at
- 37 d Bc
- Efficiency = 25% Typical CW performance
- Output power at P- 1d B = 105 W
- Gain = 15 d B
- Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power
- -30
Efficiency (%), Gain (d B)
IMD (d Bc), ACPR (d Bc)
- -
- Output Power, Avg. (d Bm)
PTF210901E Package 30248
ESD: Electrostatic discharge sensitive device...
