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PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Datasheet Summary

Description

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Carrier WCDMA Drive Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA sig

Features

  • Internal matching for wideband performance Typical two.
  • carrier 3GPP WCDMA performance - Average output power = 19 W at.
  • 37 dBc - Efficiency = 25% Typical CW performance - Output power at P.
  • 1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power.
  • -30 Efficiency (%), Gain (dB) IMD (dBc).

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Datasheet Details

Part number PTF210901
Manufacturer Infineon Technologies AG
File Size 266.35 KB
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
Datasheet download datasheet PTF210901 Datasheet
Additional preview pages of the PTF210901 datasheet.

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Full PDF Text Transcription

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PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.
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