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PTF210901

PTF210901 is LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz manufactured by Infineon.
PTF210901 datasheet preview

PTF210901 Details

Part number PTF210901
Datasheet PTF210901 Datasheet PDF (Download)
File Size 266.35 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901 page 2 PTF210901 page 3

PTF210901 Overview

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210901 Key Features

  • Internal matching for wideband performance Typical two-carrier 3GPP WCDMA performance
  • Average output power = 19 W at -37 dBc
  • Efficiency = 25% Typical CW performance
  • Output power at P-1dB = 105 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI dri
  • Output Power, Avg. (dBm)
  • observe handling precautions!
  • 37 15 25
  • 0.1 3.2 0.01

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