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PTF210901E

PTF210901E is LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz manufactured by Infineon.
PTF210901E datasheet preview

PTF210901E Details

Part number PTF210901E
Datasheet PTF210901E Datasheet PDF (Download)
File Size 266.35 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901E page 2 PTF210901E page 3

PTF210901E Overview

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210901E Key Features

  • Internal matching for wideband performance Typical two-carrier 3GPP WCDMA performance
  • Average output power = 19 W at -37 dBc
  • Efficiency = 25% Typical CW performance
  • Output power at P-1dB = 105 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI dri
  • Output Power, Avg. (dBm)
  • observe handling precautions!
  • 37 15 25
  • 0.1 3.2 0.01

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