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PTF210901E

Manufacturer: Infineon
PTF210901E datasheet preview

Datasheet Details

Part number PTF210901E
Datasheet PTF210901E_InfineonTechnologiesAG.pdf
File Size 266.35 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901E page 2 PTF210901E page 3

PTF210901E Overview

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210901E Key Features

  • Internal matching for wideband performance Typical two-carrier 3GPP WCDMA performance
  • Average output power = 19 W at -37 dBc
  • Efficiency = 25% Typical CW performance
  • Output power at P-1dB = 105 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI dri
  • Output Power, Avg. (dBm)
  • observe handling precautions!
  • 37 15 25
  • 0.1 3.2 0.01
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Part Number Description
PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

PTF210901E Distributor

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