Datasheet Summary
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110- 2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Two- Carrier WCDMA Drive- Up
VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency
Features
- - Internal matching for wideband performance Typical two- carrier 3GPP WCDMA performance
- Average output power = 19 W at
- 37 dBc
- Efficiency = 25% Typical CW performance
- Output power at P- 1dB =...