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Infineon Technologies Electronic Components Datasheet

06N03LA Datasheet

IPB06N03LA

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06N03LA pdf
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
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IPB06N03LA
IPI06N03LA, IPP06N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
5.9 m
50 A
P-TO262-3-1
P-TO220-3-1
Type
IPB06N03LA
IPI06N03LA
IPP06N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4146
Q67042-S4147
Q67042-S4148
Marking
06N03LA
06N03LA
06N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
225
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.2
page 1
2003-06-18


Infineon Technologies Electronic Components Datasheet

06N03LA Datasheet

IPB06N03LA

No Preview Available !

06N03LA pdf
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
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IPB06N03LA
IPI06N03LA, IPP06N03LA
min.
Values
typ.
Unit
max.
- - 1,8 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=40 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
25
1,2
-
-
1,6
0,1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
V GS=4.5 V, I D=30 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
-
-
-
26
10 100
10 100 nA
7,9 9,9 m
7,6 9,5
5,2 6,2
4,9 5,9
1,2 -
52 - S
1) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 91 A.
2) See figure 3
3) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 2
2003-06-18


Part Number 06N03LA
Description IPB06N03LA
Maker Infineon Technologies Corporation
Total Page 10 Pages
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