ITCH25180B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH25180B2 Preliminar Datasheet V3.

ITCH25180B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH25180B2
Manufacturer	Innogration
File Size	637.35 KB
Description	High Power RF LDMOS FET
Download	ITCH25180B2 Download (PDF)

General Description

The ITCH25180B2 is a 180-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz.

It is qualified up to 32V operation.

ITCH25180B2 Typical Performance (on Innogration fixture with device soldered): CW signal, Tcase = 25 degree C, frequency 2450MHz Vdd(V) Vgs(V) Idq(mA) Pin(dBm) Pout(dBm) Pout(W) 28 2.27 20 39.8 52.3 170 32 2.26 20 39.3 53 200 Gain(dB) 12.5 13.6 IDS(A) 10.5 11 Eff(%) 58% 56%

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Direc.

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