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ITCH20120B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

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Datasheet Details

Part number ITCH20120B2
Manufacturer Innogration
File Size 881.01 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH20120B2 Datasheet

General Description

The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH20120B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH20120B2 Preliminary Datasheet V1.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positiv.

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