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ITCH20120B2 - High Power RF LDMOS FET

Description

The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positiv.

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Datasheet preview – ITCH20120B2

Datasheet Details

Part number ITCH20120B2
Manufacturer Innogration
File Size 881.01 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH20120B2 Datasheet
Additional preview pages of the ITCH20120B2 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Description The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 19.3 50.7 55.6 51.3 56.9 1842.5 MHz 19.3 50.7 54.6 51.5 56.4 1880 MHz 19.8 50.7 53.3 51.4 55.
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