ITCH20180B2E Overview
The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20180B2 Typical Performance (On Innogration fixture with device soldered):.
ITCH20180B2E Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-pliant
- 10 to +10 +32
- 65 to +150 +150 +225