ITCH20180B2E
ITCH20180B2E is High Power RF LDMOS FET manufactured by Innogration.
- Part of the ITCH20180B2 comparator family.
- Part of the ITCH20180B2 comparator family.
Description
The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20180B2
- Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 m A, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency
Gp (d B)
P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%)
1805 MHz
1842.5 MHz
1880 MHz
- Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1.37 A, Test signal: WCDMA, 3GPP test model 1; 1 to 64 DPCH; Channel Bandwidth=3.84MHz,PAR =10.5 d B at 0.01 % probability on CCDF.
Frequency (MHz)
PL(AV) (W)
Gp (d B)
ηD
ACPR5M
ACPR10M
(%)
(d Bc)
(d Bc)
1805
-44.5
-61.6
1842.5...
