ITCH20160B2E
ITCH20160B2E is High Power RF LDMOS FET manufactured by Innogration.
- Part of the ITCH20160B2 comparator family.
- Part of the ITCH20160B2 comparator family.
Description
The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20160B2
- Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 m A, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency
Gp (d B)
P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%)
1805 MHz
1842.5 MHz
1880 MHz
Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large...
