ITCH20160B2E - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH20160B2E
Manufacturer	Innogration
File Size	882.30 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH20160B2E Datasheet
Note	This datasheet PDF includes multiple part numbers: ITCH20160B2E, ITCH20160B2. Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH20160B2E datasheet.

Product details

Description

The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positiv.

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Published: Aug 5, 2018 |