ITCH20180B2 Datasheet | Innogration

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 m A, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (d B) P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%) 1805 MHz 1842.5 MHz 1880 MHz ITCH20180B2E - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1.37 A, Test signal: WCDMA, 3GPP test model 1; 1 to 64 DPCH; Channel Bandwidth=3.84MHz,PAR =10.5 d B at 0.01 % probability on CCDF. Frequency (MHz) PL(AV) (W) Gp (d B) ηD ACPR5M ACPR10M (%) (d Bc) (d Bc) 1805  -44.5 -61.6 1842.5 -46.3 -62.5...