• Part: ITCH27100B2E
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 921.46 KB
ITCH27100B2E Datasheet (PDF) Download
Innogration
ITCH27100B2E

Description

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz.

Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant Table
  • Characteristic - ESD Protection Characteristics Symbol VDSS VGS VDD Tstg TC TJ Symbol RJC Value 70
  • 10 to +10 +32
  • Power gain and drain efficiency as function of Pulse output power(2500MHz-2700MHz) Figure