ITCH27100B2
Description
The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-pliant Table
- Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table
- Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85°C, TJ=200°C, DC test Table
- ESD Protection Characteristics Symbol VDSS VGS VDD Tstg TC TJ Symbol RJC Value 70 -10 to +10 +32 -65 to +150 +150 +225 Value Unit Vdc Vdc Vdc °C °C °C Unit °C/W 1/6 Innogration (Suzhou) Co., Ltd. Document Number: ITCH27100B2 Preliminary Datasheet V1.0 Test Methodology Class Human Body Model (per JESD22--A114) Class 2 Table
- Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC Characteristics Drain-Source Breakdown Voltage (VGS=0V; ID=1mA) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) Gate--Source Leakage Current (VGS = 10 V, VDS = 0 V) VDSS 65 70 V IDSS 10 A IGSS 1 A Gate Threshold Voltage (VDS = 28V, ID = 600 uA) VGS(th)
