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ITCH27100B2E

Manufacturer: Innogration

ITCH27100B2E datasheet by Innogration.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITCH27100B2E datasheet preview

ITCH27100B2E Datasheet Details

Part number ITCH27100B2E
Datasheet ITCH27100B2E ITCH27100B2 Datasheet (PDF)
File Size 921.46 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITCH27100B2E page 2 ITCH27100B2E page 3

ITCH27100B2E Overview

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH27100B2 Typical Performance (On Innogration fixture with device soldered):.

ITCH27100B2E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10 +32
  • 65 to +150 +150 +225
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