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MK1160VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: MK1160VP LDMOS TRANSISTOR Document Number: MK1160VP Preliminary Datasheet V1.

Datasheet Details

Part number MK1160VP
Manufacturer Innogration
File Size 551.19 KB
Description High Power RF LDMOS FET
Download MK1160VP Download (PDF)

General Description

The MK1160VP is a 600-watt, internally matched LDMOS FETs, designed for civilian pulsed avionics amplifier applications with frequencies from 1000 MHz to 1100 MHz.

There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

MK1160VP Typical Performance(On Innogration fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, Pulse CW, Pulse Width=10 us, Duty cycle=10% .

Key Features

  • Avionics: Mode-S, TCAS,JTIDS,DME and TACAN.
  • Thermally Enhanced Industry Standard Package.
  • High Reliability Metallization Process.
  • Excellent thermal Stability and Excellent Ruggedness.
  • Co.