MM1001 - High Power RF LDMOS FET

Innogration

The MM1001 by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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MM1001 High Power RF LDMOS FET by Innogration - Datasheet Preview — Official preview page of the **MM1001** High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number	MM1001
Manufacturer	Innogration
File Size	755.05 KB
Description	High Power RF LDMOS FET
Datasheet	MM1001-Innogration.pdf
Additional preview pages of the MM1001 datasheet.

MM1001 Product details

Description

The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW.Frequency Gp (dB) P-1dB (W) D@P-1 (%) 960 MHz 23 13 63

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift Suitable.

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Published: Aug 5, 2018 |