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MM10R5 - High Power RF LDMOS FET

General Description

The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.7 GHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical Pe

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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Datasheet Details

Part number MM10R5
Manufacturer Innogration
File Size 800.84 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MM10R5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MM10R5 LDMOS TRANSISTOR 5W, 28V High Power RF LDMOS FETs Description The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.7 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MM10R5 Product Datasheet V3.0 MM10R5 Typical Performance (On Innogration fixture with device soldered): P-1dB= 5 Watts @ 1000 MHz, VDD = 28 Volts, IDQ = 40 mA, CW. Frequency Gp (dB) P-1dB (W) D@P-1 (%) 1000 MHz 22 5 60 Typical Performance (On Innogration fixture with device soldered): Freq=1.3GHz，VDD = 24 Volts, IDQ = 10 mA, CW. Gp (dB) POUT (dBm) D (%) 17.1 30.6 30.4% 17.2 31.7 34.1% 17.2 32.6 37.7% 17.0 33.4 40.6% 16.5 34.0 42.