MM10R5 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

MM10R5 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MM10R5
Manufacturer	Innogration
File Size	800.84 KB
Description	High Power RF LDMOS FET
Datasheet	MM10R5 Datasheet

General Description

The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.7 GHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Document Number: MM10R5 Product Datasheet V3.0 MM10R5 Typical Performance (On Innogration fixture with device soldered): P-1dB= 5 Watts @ 1000 MHz, VDD = 28 Volts, IDQ = 40 mA, CW.

Overview

MM10R5 LDMOS TRANSISTOR 5W, 28V High Power RF LDMOS FETs.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Suitable.

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