IN25AA080N Overview
The IN25АА080N/D are a 8K(1Kx8) serial Electrically Erasable PROM with SPI interface. The IN25АА160N/D are a 16K (2Kx8) serial Electrically Erasable PROM with SPI interface (SPI). The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface.
IN25AA080N Key Features
- Data capacity, QINF: for IN25АА080N, IN25АА080D for IN25АА160N, IN25АА160D
- Maximum stand-by current, ICC
- Maximum read current, IOCCR
- Maximum write current, IOCCW
- Byte & page (16 bytes) data write modes are available
- Endurance NE/W, …...1000000 cycles
- Build-in write protection block
- Write protection for 1/4, 1/2, or all of storage array
- Power on/off data protection circuitry
- Supply voltage UCC 1,8 … 5,5 V