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IS61C64AH Datasheet Preview

IS61C64AH Datasheet

8K x 8 HIGH-SPEED CMOS STATIC RAM

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IS61C64AH
8K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 15, 20, 25 ns
• Automatic power-down when chip is
deselected
• CMOS low power operation
— 450 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 5V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Two Chip Enables (CE1 and CE2) for
simple memory expansion
DESCRIPTION
The ICSI IS61C64AH is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using ICSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 15 ns with low power consumption.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down to 250 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C64AH is packaged in the JEDEC standard 28-pin,
300mil SOJ and 330mil SOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
256 X 256
MEMORY ARRAY
COLUMN I/O
CE2
CE1
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR001-B
1




Integrated Circuit Solution

IS61C64AH Datasheet Preview

IS61C64AH Datasheet

8K x 8 HIGH-SPEED CMOS STATIC RAM

No Preview Available !

IS61C64AH
PIN CONFIGURATION
28-Pin SOJ and SOP
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 CE2
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE1
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
PIN DESCRIPTIONS
A0-A12
CE1
CE2
OE
WE
I/O0-I/O7
Vcc
GND
Address Inputs
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
WE CE1 CE2
Not Selected
(Power-down)
Output Disabled
Read
Write
X
X
H
H
L
H
X
L
L
L
X
L
H
H
H
OE
X
X
H
L
X
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND
–0.5 to +7.0
V
TBIAS Temperature Under Bias
–55 to +125 °C
TSTG
Storage Temperature
–65 to +150 °C
PT Power Dissipation
1.0 W
IOUT DC Output Current (LOW)
20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
Industrial(1)
0°C to +70°C
–40°C to +85°C
5V ± 10%
5V ± 10%
Notes:
1. Industrial supplement specification available upon request.
2 Integrated Circuit Solution Inc.
SR001-B


Part Number IS61C64AH
Description 8K x 8 HIGH-SPEED CMOS STATIC RAM
Maker Integrated Circuit Solution
Total Page 8 Pages
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