IDT71V416L Datasheet | Integrated Device Technology

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Features 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. - Equal access and cycle times - mercial and Industrial: 10/12/15ns - One Chip Select plus one Output Enable pin - Bidirectional data inputs and outputs directly LVTTL-patible - Low power consumption via chip deselect .. - Upper and Lower Byte Enable Pins - Single 3.3V power supply - Available in 44-pin, 400 mil plastic SOJ package and a 44pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. - - IDT71V416S IDT71V416L Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, bined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-patible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. Functional Block Diagram OE Output Enable Buffer A0 - A17 Address Buffers Row / Column Decoders 8 CS Chip Select Buffer 8 Sense Amps and Write Drivers High Byte Output Buffer High Byte Write Buffer 8 I/O 15 8 I/O 8 4,194,304-bit Memory Array WE Write Enable Buffer Low Byte Output Buffer Low Byte Write Buffer 8 I/O 7 8 I/O...