IS42VS16100D - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

• Clock frequency: 135, 100, 83 MHz.
• Power Supply: 1.8V.
• Fully synchronous; all signals referenced to a positive clock edge.
• Two banks can be operated simultaneously and independently.
• Dual internal bank controlled by A11 (bank select).
• Programmable burst length (1, 2, 4, 8, full page).
• Programmable burst sequence: Sequential/ Interleave.
• Programmable full and half drive strength.
• Programmable CAS latency (2, 3 clock.