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IS42VS16100D Datasheet 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

ISSI’s 16Mb Synchronous DRAM IS42VS16100D is organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

Overview

IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM.

Key Features

  • Clock frequency: 135, 100, 83 MHz.
  • Power Supply: 1.8V.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Programmable burst length (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/ Interleave.
  • Programmable full and half drive strength.
  • Programmable CAS latency (2, 3 clock.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ISSI Logo IS42VS16100E 16Mb SYNCHRONOUS DYNAMIC RAM ISSI
ISSI Logo IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM ISSI

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS83200D 256-MBIT SYNCHRONOUS DRAM
IS42R32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B 256-MBIT SYNCHRONOUS DRAM