IS42VS16100D - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution

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Datasheet Details

Part number	IS42VS16100D
Manufacturer	Integrated Silicon Solution
File Size	780.09 KB
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS42VS16100D_IntegratedSiliconSolution.pdf

IS42VS16100D Product details

Description

ISSI’s 16Mb Synchronous DRAM IS42VS16100D is organized as a 524,288-word x 16-bit x 2-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.All inputs and outputs signals refer to the rising edge of the clock input.® www.DataSheet4U.c ADVANCED INFORMATION JULY 2005

Features

Clock frequency: 135, 100, 83 MHz.
Power Supply: 1.8V.
Fully synchronous; all signals referenced to a positive clock edge.
Two banks can be operated simultaneously and independently.
Dual internal bank controlled by A11 (bank select).
Programmable burst length (1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/ Interleave.
Programmable full and half drive strength.
Programmable CAS latency (2, 3 clock.

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Published: Jun 12, 2010 |