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IS45LV44002B Datasheet DYNAMIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Overview

IS45LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval:.
  • 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Automotive Temperature Range Option A1: -40°C to +85°C Lead-free available www. DataSheet4U. com ISSI ®.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16800E 128Mb SYNCHRONOUS DRAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM