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IS61DDPB24M18 Datasheet DDR-IIP (Burst of 2) CIO Synchronous SRAMs

Manufacturer: ISSI (now Infineon)

General Description

The 72Mb IS61DDPB22M36 and IS61DDPB24M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have a common I/O bus.

The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

Overview

72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burs.

t of 2) CIO Synchronous SRAMs (2.

Key Features

  • 2M x 36 or 4M x 18.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Common data input/output bus.
  • Synchronous pipeline read with self-timed late write operation.
  • Double data rate (DDR-IIP) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K) for address and control registering at rising edges only.
  • Industrial te.