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IS61WV51216BLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV51216BLL datasheet PDF. This datasheet also includes the IS61WV51216ALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS61WV51216ALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-perform- ance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Overview

IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE op- tions.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) s.