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IS62WV51216BLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV51216BLL datasheet PDF. This datasheet also covers the IS62WV51216ALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

bits.

technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V--2.2V VDD (62WV51216ALL).
  • 2.5V--3.6V VDD (62WV51216BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV51216ALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV51216EALL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV51216EBLL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV51216GALL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV51216GBLL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV5128DALL ULTRA LOW POWER CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV51216ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128CLL 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV51216ALL IS62WV51216BLL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2007 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VDD (62WV51216ALL) – 2.5V--3.6V VDD (62WV51216BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV51216ALL/ IS62WV51216BLL are high- speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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