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IS62WV5128CLL - 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM

Description

The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation.
  • 1.5 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 2.5V--3.6V VDD (62WV5128CLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • 2 CS Options Available ISSI MARCH 2003 ®.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV5128CLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation – 1.5 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 2.5V--3.6V VDD (62WV5128CLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • 2 CS Options Available ISSI MARCH 2003 ® DESCRIPTION The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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