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IS65WV102416BLL Datasheet 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS65WV102416BLL datasheet PDF. This datasheet also includes the IS62WV102416ALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS62WV102416ALL-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

Overview

IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC.

Key Features

  • High-speed access times: 25, 35 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CS1 and OE options.
  • CS1 power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.