38F2240WWZ0Q1 Overview
Key Features
- Device Architecture
- Flash Density: 32-Mbit, 64-Mbit
- Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit
- Top, Bottom or Dual flash parameter configuration
- Device Voltage
- Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
- RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V
- Device Packaging
- 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm
- PSRAM Performance
