38F2240WWZ0Q1
Overview
- Device Architecture - Flash Density: 32-Mbit, 64-Mbit - Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit - Top, Bottom or Dual flash parameter configuration
- Device Voltage - Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V - RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V
- Device Packaging - 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm
- PSRAM Performance - 70 ns initial access, 25 ns async page reads at 1.8 V I/O - 70 ns initial access async PSRAM at 1.8V I/O - 88 ns initial access, 30 ns async page reads at 1.8 V I/O - 85 ns initial access, 35 ns async page reads at 3.0 V I/O - 70 ns initial access, 25 ns async page reads at 3.0 V I/O
- SRAM Performance - 70 ns initial access at 1.8 V or 3.0 V I/O
- Flash Performance - 65 ns initial access at 1.8 V I/O - 70 ns initial access at 3.0 V I/O - 25 ns async page at 1.8 V or 3.0 V I/O - 14 ns sync reads (tCHQV) at 1.8 V I/O - 20 ns sync reads (tCHQV) at 3.0 V I/O - Enhanced Factory Programming:
- 10 µs/Word (Typ)
- Flash Architecture - Read-While-Write/Erase - Asymmetrical blocking structure - 4-KWord parameter blocks (Top or Bottom); 32-KWord main blocks - 4-Mbit partition size - 128-bit One-Time Programmable (OTP) Protection Register - Zero-latency block locking - Absolute write protection with block lock using F-VPP and F-WP#
- Flash Software - Intel® Flash Data Integrator (FDI) and Common Flash Interface (CFI)
- Quality and Reliability - Extended Temperature: -25 °C to +85 °C - Minimum 100K flash block erase cycle - 90 nm ETOX™ IX flash technology - 130 nm ETOX™ VIII flash technology The Intel® Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static RAM combinations in a common package footprint. The flash memory features 1.8 V lowpower o
