38F2240WWZ0Q1
38F2240WWZ0Q1 is RD38F2240 manufactured by Intel.
Features
- Device Architecture
- Flash Density: 32-Mbit, 64-Mbit
- Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit
- Top, Bottom or Dual flash parameter configuration
- Device Voltage
- Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
- RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V
- Device Packaging
- 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm
- PSRAM Performance
- 70 ns initial access, 25 ns async page reads at 1.8 V I/O
- 70 ns initial access async PSRAM at 1.8V I/O
- 88 ns initial access, 30 ns async page reads at 1.8 V I/O
- 85 ns initial access, 35 ns async page reads at 3.0 V I/O
- 70 ns initial access, 25 ns async page reads at 3.0 V I/O
- SRAM Performance
- 70 ns initial access at 1.8 V or 3.0 V I/O
- Flash Performance
- 65 ns initial access at 1.8 V I/O
- 70 ns initial access at 3.0 V I/O
- 25 ns async page at 1.8 V or 3.0 V I/O
- 14 ns sync reads (t CHQV) at 1.8 V I/O
- 20 ns sync reads (t CHQV) at 3.0 V I/O
- Enhanced Factory Programming:
3.10 µs/Word (Typ)
- Flash Architecture
- Read-While-Write/Erase
- Asymmetrical blocking structure
- 4-KWord parameter blocks (Top or Bottom); 32-KWord main blocks
- 4-Mbit partition size
- 128-bit One-Time Programmable (OTP) Protection Register
- Zero-latency block locking
- Absolute write protection with block lock using F-VPP and F-WP#
- Flash Software
- Intel® Flash Data Integrator (FDI) and mon Flash Interface (CFI)
- Quality and Reliability
- Extended Temperature:
- 25 °C to +85 °C
- Minimum 100K flash block erase...
