38F2240WWZ0Q1
Key Features
- Device Architecture
- Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
- Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm
- PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O
- SRAM Performance — 70 ns initial access at 1.8 V or 3.0 V I/O
- Flash Performance — 65 ns initial access at 1.8 V I/O
- Flash Architecture — Read-While-Write/Erase
- Quality and Reliability — Extended Temperature: –25 °C to +85 °C
- Other names and brands may be claimed as the property of others
