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N28F512 Datasheet Preview

N28F512 Datasheet

512K (64K x 8) CMOS FLASH MEMORY

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28F512
512K (64K x 8) CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
Y Quick-Pulse Programming Algorithm
10 ms Typical Byte-Program
1 Second Chip-Program
Y 100 000 Erase Program Cycles
Y 12 0V g5% VPP
Y High-Performance Read
120 ns Maximum Access Time
Y CMOS Low Power Consumption
10 mA Typical Active Current
50 mA Typical Standby Current
0W Data Retention Power
Y Integrated Program Erase Stop Timers
Y Command Register Architecture for
Microprocessor Microcontroller
Compatible Write Interface
Y Noise Immunity Features
g10% VCC Tolerance
Maximum Latch-Up Immunity
through EPI Processing
Y ETOX II Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
Y JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
(See Packaging Spec Order 231369)
Y Extended Temperature Options
Intel’s 28F512 CMOS flash memory offers the most cost-effective and reliable alternative for read write
random access nonvolatile memory The 28F512 adds electrical chip-erasure and reprogramming to familiar
EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on-
board during subassembly test in-system during final test and in-system after-sale The 28F512 increases
memory flexibility while contributing to time- and cost-savings
The 28F512 is a 512-kilobit nonvolatile memory organized as 65 536 bytes of 8 bits Intel’s 28F512 is offered
in 32-pin plastic dip or 32-lead PLCC packages Pin assignments conform to JEDEC standards for byte-wide
EPROMs
Extended erase and program cycling capability is designed into Intel’s ETOX II (EPROM Tunnel Oxide) pro-
cess technology Advanced oxide processing an optimized tunneling structure and lower electric field com-
bine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP supply the 28F512
performs 100 000 erase and program cycles well within the time limits of the Quick-Pulse Programming and
Quick-Erase algorithms
Intel’s 28F512 employs advanced CMOS circuitry for systems requiring high-performance access speeds low
power consumption and immunity to noise Its 120 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers Maximum standby current of 100 mA trans-
lates into power savings when the device is deselected Finally the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins from b1V to VCC a 1V
With Intel’s ETOX II process base the 28F512 levers years of EPROM experience to yield the highest levels of
quality reliability and cost-effectiveness
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
November 1994
Order Number 290204-008




Intel

N28F512 Datasheet Preview

N28F512 Datasheet

512K (64K x 8) CMOS FLASH MEMORY

No Preview Available !

28F512
Figure 1 28F512 Block Diagram
290204 – 1
2


Part Number N28F512
Description 512K (64K x 8) CMOS FLASH MEMORY
Maker Intel
Total Page 28 Pages
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