RD38F2010 Datasheet | Intel

Features - - - - - Device Architecture - Flash Density: 32-Mbit, 64-Mbit - Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit - Top, Bottom or Dual flash parameter configuration Device Voltage - Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V - RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging - 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance - 70 ns initial access, 25 ns async page reads at 1.8 V I/O - 70 ns initial access async PSRAM at 1.8V I/O - 88 ns initial access, 30 ns async page reads at 1.8 V I/O - 85 ns initial access, 35 ns async page reads at 3.0 V I/O - 70 ns initial access, 25 ns async page reads at 3.0 V I/O SRAM Performance - 70 ns initial access at 1.8 V or 3.0 V I/O - - - - Flash Performance - 65 ns initial access at 1.8 V I/O - 70 ns initial access at 3.0 V I/O - 25 ns async page at 1.8 V or 3.0 V I/O - 14 ns sync reads (t CHQV) at 1.8 V I/O - 20 ns sync reads (t CHQV) at 3.0 V I/O - Enhanced Factory Programming: 3.10 µs/Word (Typ) Flash Architecture - Read-While-Write/Erase - Asymmetrical blocking structure - 4-KWord parameter blocks (Top or Bottom); 32-KWord main blocks - 4-Mbit partition size - 128-bit One-Time Programmable (OTP) Protection Register - Zero-latency block locking - Absolute write protection with block lock using F-VPP and F-WP# Flash Software - Intel® Flash Data Integrator (FDI) and mon Flash Interface (CFI) Quality and Reliability - Extended Temperature: - 25 °C to +85 °C - Minimum 100K flash block erase cycle - 90 nm ETOX™ IX flash technology - 130 nm ETOX™ VIII flash technology The Intel® Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static RAM binations in a mon package footprint. The flash memory features 1.8 V lowpower operations with flexible, multi-partition, dual-operation Read-While-Write / Read-While Erase, asynchronous, and synchronous reads. This SCSP device integrates up to two flash die, one PSRAM die,...