IFN5912 Description
The -25V InterFET IFN5911 and IFN 5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications.
IFN5912 Key Features
- InterFET N0030L Geometry
- Low Noise: 4.0 nV/√Hz Typical
- Low Leakage: 10pA Typical
- Low Input Capacitance: 5.0 pF Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options