J176 Description
The 30V InterFET J176 and J177 are very low leakage low noise P-channel JFETs targeted for high gain switching, mutator, and chopper applications. Gate leakages are typically less 3pA at room temperatures. The J177 has a cutoff voltage of less than 2.25V ideal for low-level power supplies.
J176 Key Features
- InterFET P0099F Geometry
- Low noise: 2.0 nV/√Hz typical
- High gain: 10mS typical
- Low gate leakage: 2.5pA typical @10V
- Typical IDSS: 10mA
- Typical BVGSS: -55V
- High radiation tolerance
- RoHS, REACH, CMR pliant
- Custom test and binning options available
- SMT, TH, and bare die package options