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InterFET

J202 Datasheet Preview

J202 Datasheet

N-Channel JFET

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InterFET
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J201-2
J201, J202 N-Channel JFET
Features
InterFET N0016SH Geometry
Low Noise: 5 nV/√Hz Typical
Low Ciss: 4pF Typical
RoHS Compliant
SMT, TH, and Bare Die Package options.
Applications
Audio Amplifiers
Small Signal Amplifier
Ultrahigh Impedance Pre-Amplifier
Description
The -40V InterFET J201 and J202 are targeted for
sensitive amplifier stages for mid-frequencies
designs. Gate leakages are typically less than 10pA
at room temperatures.
Source 1
Drain 2
Gate 3
Drain 2
Source 1
SOT23 Top View
3 Gate
TO-92 Bottom View
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
J201 Min
-40
0.2
-0.3
500
Ordering Information Custom Part and Binning Options Available
Part Number
Description
J201; J202
Through-Hole
SMPJ201; SMPJ202
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMPJ201TR; SMPJ202TR
13” Tape and Reel: Max 9,000 Pieces
J201COT; J202COT
Chip Orientated Tray (COT Waffle Pack)
J201CFT; J202CFT
Chip Face-up Tray (CFT Waffle Pack)
J202 Min
Unit
-40
V
0.9
mA
-0.8
V
1000
μS
Case
TO-92
SOT23
SOT23
COT
CFT
Packaging
Bulk
Bulk
Minimum 1,000 Pieces
Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35018.R00




InterFET

J202 Datasheet Preview

J202 Datasheet

N-Channel JFET

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
J201-2
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate Source and Gate Drain Voltage
IFG Continuous Forward Gate Current
PD Continuous Device Power Dissipation
P Power Derating
TJ Operating Junction Temperature
TSTG Storage Temperature
Value
-40
50
360
3.27
-55 to 125
-65 to 200
Unit
V
mA
mW
mW/°C
°C
°C
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IG
Parameters
Gate to Source
Breakdown Voltage
Gate to Source
Reverse Current
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Gate Operating
Current
Conditions
VDS = 0V, IG = -1μA
VGS = -20V, VDS = 0V
VDS = 20V, ID = 10nA
VGS = 0V, VDS = 20V
(Pulsed)
VDG = 20V, ID = IDSS(min)
J201
J202
Min Typ Max Min Typ Max Unit
-40
-40
V
-100
-100 pA
-0.3
-1.5 -0.8
-4
V
0.2
1 0.9
4.5 mA
-10
-10
pA
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
J201
J202
Parameters
Conditions
Min Typ Max Min Typ Max Unit
GFS
Forward
Transconductance
VDS = 20V, VGS = 0V, f = 1kHz 500
1000
μS
GOS
Output Conductance
VDS = 20V, VGS = 0V, f = 1kHz
1
3.5
μS
Ciss
Input Capacitance
VDS = 20V, VGS = 0V, f = 1MHz
4
Crss
Reverse Transfer
Capacitance
VDS = 20V, VGS = 0V, f = 1MHz
1
en
Noise Voltage
VDS = 10V, VGS = 0V, f = 1kHz
5
4
pF
1
pF
5
nV/Hz
J201-2
Document Number: IF35018.R00
2 of 4
www.InterFET.com
InterFET Corporation
June, 2019


Part Number J202
Description N-Channel JFET
Maker InterFET
Total Page 3 Pages
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