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InterFET

J212 Datasheet Preview

J212 Datasheet

N-Channel JFET

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InterFET
Product
Folder
Technical
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J210-1-2
J210, J211, J212 N-Channel JFET
Features
InterFET N0026L Geometry
Low Noise: 2.5 nV/√Hz Typical
Low Ciss: 5pF Typical
Low Leakage: 10pA Typical
RoHS Compliant
SMT, TH, and Bare Die Package options.
Applications
Audio Amplifiers
General Purpose Amplifiers
Description
The -25V InterFET J210, J211, and J212 JFET’s are
targeted for sensitive amplifier stages with gate
leakages typically less than 10pA at room
temperatures.
Drain 1
Source 2
SOT23 Top View
3 Gate
Gate 3
Source 2
Drain 1
TO-92 Bottom View
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
J210 Min J211 Min J212 Min
Unit
-25
-25
-25
V
2
7
15
mA
-1
-2.5
-4
V
4
6
7
mS
Ordering Information Custom Part and Binning Options Available
Part Number
Description
Case
J210; J211; J212
Through-Hole
TO-92
SMPJ210; SMPJ211; SMPJ212
Surface Mount
SOT23
7“ Tape and Reel: Max 3,000 Pieces
SMPJ210TR; SMPJ211TR; SMPJ212TR
13” Tape and Reel: Max 9,000 Pieces SOT23
J210COT; J211COT; J212COT
Chip Orientated Tray (COT Waffle Pack) COT
J210CFT; J211CFT; J212CFT
Chip Face-up Tray (CFT Waffle Pack)
CFT
Packaging
Bulk
Bulk
Minimum 1,000 Pieces
Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35030.R00




InterFET

J212 Datasheet Preview

J212 Datasheet

N-Channel JFET

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
J210-1-2
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate Source and Gate Drain Voltage
IFG Continuous Forward Gate Current
PD Continuous Device Power Dissipation
P Power Derating
TJ Operating Junction Temperature
TSTG Storage Temperature
Value
-25
10
360
3.27
-55 to 125
-65 to 150
Unit
V
mA
mW
mW/°C
°C
°C
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
J210
J211
J212
Parameters
Conditions
Min Max Min Max Min Max Unit
V(BR)GSS
Gate to Source
Breakdown Voltage
VDS = 0V, IG = -1μA
-25
-25
-25
V
IGSS
Gate to Source
Reverse Current
VGS = -15V, VDS = 0V
-100
-100
-100 pA
IG
Gate Operating
Current
VDS = 10V, ID = 1mA
-10 (typ)
-10 (typ) -10 (typ)
pA
VGS(OFF)
Gate to Source
Cutoff Voltage
VDS = 15V, ID = 1nA
-1 -3 -2.5 -4.5 -4 -6
V
IDSS
Drain to Source
Saturation Current
VGS = 0V, VDS = 15V
(Pulsed)
2 15 7 20 15 40 mA
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
J210
J211
J212
Parameters
Conditions
Min Max Min Max Min Max Unit
GFS
Forward
Transconductance
VDS = 15V, VGS = 0V, f = 1kHz 4
12 6
12 7
10
mS
GOS
Output Conductance VDS = 15V, VGS = 0V, f = 1kHz
150
200
200 μS
Ciss
Input Capacitance
VDS = 15V, VGS = 0V, f = 1MHz 4 (typ)
4 (typ)
4 (typ)
pF
Crss
Reverse Transfer
Capacitance
VDS = 15V, VGS = 0V, f = 1MHz 1 (typ)
1 (typ)
1 (typ)
pF
en
Noise Voltage
VDS = 15V, VGS = 0V, f = 1kHz 10 (typ)
10 (typ)
10 (typ) nV/Hz
J210-1-2
Document Number: IF35030.R00
2 of 4
www.InterFET.com
InterFET Corporation
June, 2019


Part Number J212
Description N-Channel JFET
Maker InterFET
Total Page 3 Pages
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J212 Datasheet PDF

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