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N0132S Datasheet

Process Geometry

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N0132S
N0132S Process Geometry
Features
Low Noise: 1.2 nV/√Hz Typical
Typical Input Capacitance: 13pF
Typical Breakdown Voltage: -45V
High Input Impedance
Small Die: 518um X 518um X 203um
Bond Pads: 90um X 90um
Substrate Connected to Gate
Au Back-Side Finish
Applications
Low Noise Amplifier
Audio Amplifiers
Mid to High-Gain Applications
Matched Pair Applications
Custom Part Options
Description
The InterFET N0132S Geometry is ideal for low
noise high gain applications. Similar features to
the N0132L Geometry with higher BV and lower
input capacitance.
Geometry Top View
132
G
S-D
S-D
G
Test
Pattern
Standard Parts
2N4391, 2N4392, 2N4393
2N3970, 2N3971, 2N3972
2N4856/A, 2N4857/A, 2N4858/A
2N4859/A, 2N4860/A, 2N4861/A
J111, J112, J113
IFN113
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
Min
Typ
Max
Unit
-35
-45
V
5
150
mA
-0.5
-7
V
32
mS
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
Min
Typ
Max
Unit
VRGS Reverse Gate to Source or Drain Voltage
-35
-45
V
IFG Continuous Forward Gate Current
10
mA
TJ Operating Junction Temperature
-55
150
°C
TSTG Storage Temperature
-65
175
°C
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35514.R01




InterFET

N0132S Datasheet Preview

N0132S Datasheet

Process Geometry

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
Electrical Characteristics
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
BVGSS
Gate to Source
Breakdown Voltage
IG = -1μA, VDS = 0V
-35
-45
IGSS
Gate to Source
Reverse Current
VGS = -10V, VDS = 0V
-50
VGS(OFF)
Gate to Source
Cutoff Voltage
VDS = 10V, ID = 1nA
-0.5
IDSS
Drain to Source
Saturation Current
VDS = 10V, VGS = 0V
5
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
GFS
Forward
Transconductance
VDS = 10V, VGS = 0 V,
f = 1kHz
32
Ciss Input Capacitance
VDS = 10V, VGS = 0 V,
f = 1MHz
13
Crss
Reverse Transfer
Capacitance
VDS = 0V, VGS = -10 V,
f = 1MHz
3.0
en Noise Voltage
VDS = 4V, ID = 5mA,
f = 1kHz
1.2
N0132S
Max
Unit
V
-100
pA
-7
V
150
mA
Max
Unit
mS
pF
pF
nV/Hz
N0132S
Document Number: IF35514.R01
2 of 5
www.InterFET.com
InterFET Corporation
March, 2020


Part Number N0132S
Description Process Geometry
Maker InterFET
Total Page 3 Pages
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