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N0132S InterFET Process Geometry

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Description The InterFET N0132S Geometry is ideal for low noise high gain applications. Similar features to the N0132L Geometry with higher BV and lower input capacitance. Geometry Top View 132 G S-D S-D G Test Pattern Standard Parts • 2N4391, 2N4392, 2N4393 • 2N3970, 2N3971, 2N3972 • 2N4856/A, 2N4857/A, 2N4858/A • 2N4859/A, 2N4860/A, 2N4861/A • J111, J112, J113 • IFN113 Product Summary Parameters ...
Features
• Low Noise: 1.2 nV/√Hz Typical
• Typical Input Capacitance: 13pF
• Typical Breakdown Voltage: -45V
• High Input Impedance
• Small Die: 518um X 518um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• Low Noise Amplifier
• Audio Amplifiers
• Mid to High-Gain Applications
• Matched Pair Applications
•...

Datasheet PDF File N0132S Datasheet - 362.45KB
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