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N0132S - Process Geometry

Description

The InterFET N0132S Geometry is ideal for low noise high gain applications.

Features

  • Low Noise: 1.2 nV/√Hz Typical.
  • Typical Input Capacitance: 13pF.
  • Typical Breakdown Voltage: -45V.
  • High Input Impedance.
  • Small Die: 518um X 518um X 203um.
  • Bond Pads: 90um X 90um.
  • Substrate Connected to Gate.
  • Au Back-Side Finish.

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Datasheet Details

Part number N0132S
Manufacturer InterFET
File Size 362.45 KB
Description Process Geometry
Datasheet download datasheet N0132S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now N0132S N0132S Process Geometry Features • Low Noise: 1.2 nV/√Hz Typical • Typical Input Capacitance: 13pF • Typical Breakdown Voltage: -45V • High Input Impedance • Small Die: 518um X 518um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Mid to High-Gain Applications • Matched Pair Applications • Custom Part Options Description The InterFET N0132S Geometry is ideal for low noise high gain applications. Similar features to the N0132L Geometry with higher BV and lower input capacitance.
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