Datasheet Summary
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N0132S Process Geometry
Features
- Low Noise: 1.2 nV/√Hz Typical
- Typical Input Capacitance: 13pF
- Typical Breakdown Voltage: -45V
- High Input Impedance
- Small Die: 518um X 518um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Low Noise Amplifier
- Audio Amplifiers
- Mid to High-Gain Applications
- Matched Pair Applications
- Custom Part Options
Description
The InterFET N0132S Geometry is ideal for low noise high gain applications. Similar Features to the N0132L Geometry with higher BV and lower input capacitance.
Geometry Top View
S-D
S-D
Test
Pattern
Sta...