N0132H - Process Geometry

InterFET

General Description

The InterFET N0132H Geometry is ideal for low noise high gain applications.

Key Features

Low Noise: 1.5 nV/√Hz Typical.
Typical Input Capacitance: 12pF.
Typical Breakdown Voltage: -60V.
High Input Impedance.
Small Die: 518um X 518um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0132H process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0132H
Manufacturer	InterFET
File Size	360.32 KB
Description	Process Geometry
Datasheet	N0132H Datasheet

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Other Datasheets by InterFET

Part Number	Description
N0132S	Process Geometry

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now N0132H N0132H Process Geometry Features • Low Noise: 1.5 nV/√Hz Typical • Typical Input Capacitance: 12pF • Typical Breakdown Voltage: -60V • High Input Impedance • Small Die: 518um X 518um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Mid to High-Gain Applications • Matched Pair Applications • Custom Part Options Description The InterFET N0132H Geometry is ideal for low noise high gain applications. Similar features to the N0132S Geometry with higher BV and lower input capacitance.