N0132H
Features
- Low Noise: 1.5 n V/√Hz Typical
- Typical Input Capacitance: 12p F
- Typical Breakdown Voltage: -60V
- High Input Impedance
- Small Die: 518um X 518um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Low Noise Amplifier
- Audio Amplifiers
- Mid to High-Gain Applications
- Matched Pair Applications
- Custom Part Options
Description
The Inter FET N0132H Geometry is ideal for low noise high gain applications. Similar features to the N0132S Geometry with higher BV and lower input capacitance.
Geometry Top View
S-D
S-D
Test
Pattern
Standard Parts
- IFN112
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-45
-60...
