N0132H Description
The InterFET N0132H Geometry is ideal for low noise high gain applications.
N0132H Key Features
- Low Noise: 1.5 nV/√Hz Typical
- Typical Input Capacitance: 12pF
- Typical Breakdown Voltage: -60V
- High Input Impedance
- Small Die: 518um X 518um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish