InterFET N0132H
the N0132S Geometry with higher BV and lower input capacitance.| Part No. | N0132H |
|---|---|
| Datasheet | N0132H Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Noise: 1.5 nV/√Hz Typical● Typical Input Capacitance: 12pF
● Typical Breakdown Voltage: -60V
● High Input Impedance
● Small Die: 518um X 518um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Low Noise Amplifier● Audio Amplifiers
● Mid to High-Gain
APPLICATIONS
● Matched PairAPPLICATIONS
● Custom Part OptionsDESCRIPTION
The InterFET N0132H Geometry is ideal for low noise high gain applications. Similar features to Geometry Top View 132 G S-D S-D G Test Pattern Standard Parts● IFN112 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -45 -60 V 5 120 mA -0.5 -7 V 28 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -45 -60 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperatur...
